English 
Italiano 
In the last decades Silicon Carbide (SiC) received special attentions, in particular as semiconductor material, because is considered as alternative to Silicon for the future high-power, low consumption, radiation-hard microelectronics devices. This ambitious goal is particularly interesting also for the physics of the detectors. In this work are discussed some of the recent results obtained by SiCILIA collaboration, a joint research activity between INFN and IMM institutions to increase the level of technological development in the field of SiC detectors.
In a world increasingly facing new challenges at the forefront of plasma scientific research and technological innovation, CNR and ISTP pledge progress and achieve an impact in the integration of research into societal practices and policy
