Single-crystal chemical vapour deposition (CVD) diamond samples with asymmetric Schottky contacts were used for the fabrication of vertical metal-semiconductor-metal detectors for deep ultraviolet (UV-C) radiation. Spectral photoconductivity measurements, performed in the 190 ÷ 1100 nm wavelength range, returned an ultraviolet-to-visible (UV/Vis) rejection ratio of 6.8 × 103 under photovoltaic operating conditions, ensuring solar blindness and zero power consumption at the same time. When applying bias, UV/Vis rejection ratio reached excellent values (>104) even at very low electric fields (0.01 V/?m), thanks to the excellent structural quality and the superior charge transport properties of the diamond bulk, as inferred from Raman analysis and spectral photoconductivity measurements. Mobility-lifetime (??) product of the photogenerated carriers was indeed measured to be about 5 × 10-3 cm2/V in case of holes, which is the highest room-temperature ?? value ever reported for CVD diamond, enabling a response speed in the nanosecond range even at zero-bias operating conditions.
Self-powered solar-blind ultrafast UV-C diamond detectors with asymmetric Schottky contacts
Girolami Marco; Serpente Valerio; Mastellone Matteo; Tardocchi Marco; Rebai Marica; Xiu Qinglei; Liu Jinlong; Sun Zhijia; Zhao Yubin; Valentini Veronica; Trucchi Daniele M.
Journal:
Carbon 189 pp. 27 - 36
Year:
2022
ISTP Authors: Marica Rebai
Marco Tardocchi
Keywords: CVD diamond, UV-C detectors, Self-powered solar-blind detectors, Asymmetric Schottky contacts, Metal-semiconductor-metal detectors, Mobility-lifetime product
Research Activitie: JOURNAL ARTICLES
ID | 460785 |
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DOI | 10.1016/j.carbon.2021.12.050 |
PRODUCT TYPE | Journal Article |
LAST UPDATE | 2022-09-05T13:19:58Z |